MMBD7000LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Dual Switching Diode

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Switching Diode
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by MMBD7000LT1/D
MMBD7000LT1
Motorola Preferred Device
MAXIMUM RATINGS (EACH DIODE)
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
MMBD7000LT1 = M5C
1
ANODE
3
CATHODE/ANODE
2
CATHODE
Symbol
VR
IF
IFM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I(BR) = 100 µAdc)
V(BR)
Reverse Voltage Leakage Current
(VR = 50 Vdc)
IR
(VR = 100 Vdc)
IR2
(VR = 50 Vdc, 125°C)
IR3
Forward Voltage
VF
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 100 mAdc)
Reverse Recovery Time
trr
(IF = IR = 10 mAdc) (Figure 1)
Capacitance (VR = 0 V)
C
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
3
1
2
CASE 318 – 08, STYLE 11
SOT– 23 (TO – 236AB)
Min
Max
Unit
100
—
Vdc
µAdc
—
1.0
—
3.0
—
100
Vdc
0.55
0.7
0.67
0.82
0.75
1.1
—
4.0
ns
—
1.5
pF
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1