MLD1N06CL Datasheet, PDF (1/6 Pages) Motorola, Inc – VOLTAGE CLAMPED CURRENT LIMITING MOSFET

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MLD1N06CL/D
™ Designer's Data Sheet
SMARTDISCRETES ™
Internally Clamped, Current Limited
N–Channel Logic Level Power MOSFET
The MLD1N06CL is designed for applications that require a rugged power switching
device with short circuit protection that can be directly interfaced to a microcontrol unit
(MCU). Ideal applications include automotive fuel injector driver, incandescent lamp
driver or other applications where a high in–rush current or a shorted load condition could
occur.
This logic level power MOSFET features current limiting for short circuit protection,
integrated Gate–Source clamping for ESD protection and integral Gate–Drain clamping
for over–voltage protection and Sensefet technology for low on–resistance. No additional
gate series resistance is required when interfacing to the output of a MCU, but a 40 kΩ
gate pulldown resistor is recommended to avoid a floating gate condition.
The internal Gate–Source and Gate–Drain clamps allow the device to be applied
without use of external transient suppression components. The Gate–Source clamp
protects the MOSFET input from electrostatic voltage stress up to 2.0 kV. The
Gate–Drain clamp protects the MOSFET drain from the avalanche stress that occurs
with inductive loads. Their unique design provides voltage clamping that is essentially
independent of operating temperature.
The MLD1N06CL is fabricated using Motorola’s SMARTDISCRETES™ technology which
combines the advantages of a power MOSFET output device with the on–chip protective
circuitry that can be obtained from a standard MOSFET process. This approach offers an
economical means of providing protection to power MOSFETs from harsh automotive and
industrial environments. SMARTDISCRETES™ devices are specified over a wide tempera-
ture range from –50°C to 150°C.
MLD1N06CL
Motorola Preferred Device
VOLTAGE CLAMPED
CURRENT LIMITING
MOSFET
62 VOLTS (CLAMPED)
RDS(on) = 0.75 OHMS
D
R1
G
R2
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 MΩ)
Gate–to–Source Voltage — Continuous
Drain Current — Continuous
— Single Pulse
Total Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Voltage (Human Model)
VDSS
VDGR
VGS
ID
IDM
PD
TJ, Tstg
ESD
Clamped
Clamped
±10
Self–limited
1.8
40
–50 to 150
2.0
Vdc
Vdc
Vdc
Adc
Apk
Watts
°C
kV
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case
— Junction to Ambient
— Junction to Ambient (1)
Maximum Lead Temperature for Soldering Purposes,
1/8″ from case for 5 sec.
R_θJC
R_θJA
R_θJA
TL
3.12
°C/W
100
71.4
260
°C
CASE 369A–13, Style 2
DPAK Surface Mount
UNCLAMPED DRAIN–TO–SOURCE AVALANCHE CHARACTERISTICS
Single Pulse Drain–to–Source Avalanche Energy
Starting TJ = 25°C
EAS
80
mJ
(1) When surface mounted to an FR4 board using the minimum recommended pad size.
SMARTDISCRETES is a trademark of Motorola, Inc.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
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