MJW21192 Datasheet, PDF (1/8 Pages) Motorola, Inc – 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 150 VOLTS 100 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJW21192/D
Complementary Silicon Plastic
Power Transistors
Specifically designed for power audio output, or high power drivers in audio
amplifiers.
• DC Current Gain Specified up to 8.0 Amperes at Temperature
• All On Characteristics at Temperature
• High SOA: 20 A, 18 V, 100 ms
• TO–247AE Package
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{— Peak}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Thermal Resistance, Junction to Ambient}
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Symbol
R_θJC
R_θJA
MJW21191
MJW21192
150
150
5.0
8.0
16
2.0
100
0.65
– 65 to + 150
Max
0.65
50
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C/W
1000
PNP
NPN
100
NPN
MJW21192
PNP
MJW21191
8.0 AMPERES
POWER TRANSISTORS
COMPLEMENTARY
SILICON
150 VOLTS
100 WATTS
CASE 340K–01
TO–247AE
10
1.0
1.0
10
100
1000
VR, REVERSE VOLTAGE (V)
Figure 1. Typical Capacitance @ 25°C
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la97_{r Power Transistor Device Data}
1