MJW16212 Datasheet, PDF (1/8 Pages) Motorola, Inc – POWER TRANSISTOR 10 AMPERES 1500 VOLTS - VCES 50 AND 150 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
SCANSWITCH™
NPN Bipolar Power Deflection Transistor
For High and Very High Resolution Monitors
The MJW16212 is a state–of–the–art SWITCHMODE™ bipolar power transistor. It
is specifically designed for use in horizontal deflection circuits for 20 mm diameter
neck, high and very high resolution, full page, monochrome monitors.
• 1500 Volt Collector–Emitter Breakdown Capability
• Typical Dynamic Desaturation Specified (New Turn–Off Characteristic)
• Application Specific State–of–the–Art Die Design
• Fast Switching:
200 ns Inductive Fall Time (Typ)
2000 ns Inductive Storage Time (Typ)
• Low Saturation Voltage:
0.15 Volts at 5.5 Amps Collector Current and 2.5 A Base Drive
• Low Collector–Emitter Leakage Current — 250 µA Max at 1500 Volts — VCES
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • High Emitter–Base Breakdown Capability For High Voltage Off Drive Circuits —
8.0 Volts (Min)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Breakdown Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Sustaining Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{RMS Isolation Voltage (2)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (for 1 sec, TA = 25_C,
Rel. Humidity < 30%)
Per Fig. 14
Per Fig. 15
Symbol
VCES
VCEO(sus)
VEBO
VISOL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
IC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Pulsed (1)}
ICM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Continuous}
IB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current — Pulsed (1)}
IBM
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Repetitive Emitter–Base
Avalanche Energy
W (BER)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25_C}
PD
Total Power Dissipation @ TC = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derated above TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Temperature Range}
TJ, Tstg
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance — Junction to Case}
R_θJC
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Lead Temperature for Soldering Purposes}
TL
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ 1/8″ from the case for 5 seconds
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{v (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%.}
Value
1500
650
8.0
—
—
10
15
5.0
10
0.2
150
39
1.49
– 55 to 125
Max
0.67
275
Unit
Vdc
Vdc
Vdc
V
Adc
Adc
mJ
Watts
W/_C
_C
Unit
_C/W
_C
(2) Proper strike and creepage distance must be provided.
Preferred devices are Motorola recommended choices for future use and best overall value.
SCANSWITCH and SWITCHMODE are trademarks of Motorola Inc.
REV 1
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
Order this document
by MJW16212/D
MJF18002 (See MJE18002)
MJF18004 (See MJE18004)
MJF18006 (See MJE18006)
MJF18008 (See MJE18008)
MJW16212*
*Motorola Preferred Device
POWER TRANSISTOR
10 AMPERES
1500 VOLTS – VCES
50 AND 150 WATTS
CASE 340F–03
TO–247AE
3–1