MJF15030 Datasheet, PDF (1/6 Pages) Motorola, Inc – COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS 36 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Power
Transistors
For Isolated Package Applications
Designed for general–purpose amplifier and switching applications, where the
mounting surface of the device is required to be electrically isolated from the heatsink
or chassis.
• Electrically Similar to the Popular MJE15030 and MJE15031
• 150 VCEO(sus)
• 8 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High Current Gain–Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
• UL Recognized, File #E69369, to 3500 VRMS Isolation
Order this document
by MJF15030/D
MJF^N1^P5^N030
MJF^P1^N5^P031
COMPLEMENTARY
SILICON
POWER TRANSISTORS
8 AMPERES
150 VOLTS
36 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ RMS Isolation Voltage (1)
(for 1 sec, R.H. < 30%,
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{TA = 25_C)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current — Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{— Peak}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation* @ TC = 25_C
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TA = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case*}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Lead Temperature for Soldering Purpose}
CASE 221D–02
TO–220 TYPE
Test No. 1 Per Fig. 11
Test No. 2 Per Fig. 12
Test No. 3 Per Fig. 13
Symbol
VCEO
VCB
VEB
VISOL
IC
IB
PD
PD
TJ, Tstg
Symbol
R_θJA
R_θJC
TL
Value
150
150
5
4500
3500
1500
8
16
2
36
0.29
2
0.016
– 65 to + 150
Unit
Vdc
Vdc
Vdc
VRMS
Adc
Adc
Watts
W/_C
Watts
W/_C
_C
Max
Unit
62.5
_C/W
3.5
_C/W
260
_C
* Measurement made with thermocouple contacting the bottom insulated mounting surface (in a location beneath the die), the device mounted on
a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs.
(1) Proper strike and creepage distance must be provided.
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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