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MJE1123 Datasheet, PDF (1/6 Pages) Motorola, Inc – PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE1123/D
Bipolar Power PNP
Low Dropout Regulator
Transistor
The MJE1123 is an applications specific device designed to provide lowâdropout
linear regulation for switchingâregulator post regulators, battery powered systems
and other applications. The MJE1123 is fully specified in the saturation region and
exhibits the following main features:
⢠High Gain Limits BaseâDrive Losses to only 1â2% of Circuit Output Current
⢠Gain is 100 Minimum at IC = 1.0 Amp, VCE = 7.0 Volts
⢠Excellent Saturation Voltage Characteristic, 0.2 Volts Maximum at 1.0 Amp
MAXIMUM RATINGS (TC = 25°C Unless Otherwise Noted.)
Rating
Symbol
CollectorâEmitter Sustaining Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Collector Current â Peak
Base Current â Continuous
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCEO
VCB
VEB
IC
ICM
IB
PD
Operating and Storage Temperature
TJ, Tstg
THERMAL CHARACTERISTICS
Thermal Resistance â Junction to Case°
Thermal Resistance â Junction to Ambient°
Maximum Lead Temperature for Soldering Purposes:
1/8â³ from Case for 5 seconds
RθJC
RθJA
TL
Value
Unit
40
Vdc
50
Vdc
5.0
Vdc
4.0
Adc
8.0
4.0
Adc
75
Watts
0.6
W/°C
â 65 to +150 °C
°1.67°
°70°
275
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C Unless Otherwise Noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS*
CollectorâEmitter Sustaining Voltage (IC = 1.0 mA, I = 0)
EmitterâBase Voltage (IE = 100 µA)
Collector Cutoff Current
(VCE = 7.0 Vdc, IB = 0)
(VCE = 20 Vdc, IB = 0)
VCEO(sus)
40
VEBO
7.0
ICEO
â
â
ON CHARACTERISTICS*
CollectorâEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 20 mAdc)
(IC = 1.0 Adc, IB = 50 mAdc)
(IC = 1.0 Adc, IB = 120 mAdc)
(IC = 2.0 Adc, IB = 50 mAdc)
(IC = 2.0 Adc, IB = 120 mAdc)
(IC = 4.0 Adc, IB = 120 mAdc)
* Indicates Pulse Test: Pulse Width = 300 µs max, Duty Cycle = 2%.
VCE(sat)
â
â
â
â
â
â
MJE1123
PNP LOW DROPOUT
TRANSISTOR
4.0 AMPERES
40 VOLTS
CASE 221Aâ06
TOâ220AB
Typ
Max
Unit
65
â
Vdc
11
â
Vdc
µAdc
â
100
â
250
Vdc
0.16
0.30
0.13
0.25
0.10
0.20
0.25
0.40
0.20
0.35
0.45
0.75
(continued)
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
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