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MJD122 Datasheet, PDF (1/8 Pages) Motorola, Inc – SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20 WATT | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications.
⢠Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
⢠Straight Lead Version in Plastic Sleeves (ââ1â Suffix)
⢠Lead Formed Version Available in 16 mm Tape and Reel (âT4â Suffix)
⢠Surface Mount Replacements for 2N6040â2N6045 Series, TIP120âTIP122
Series, and TIP125âTIP127 Series
⢠Monolithic Construction With Builtâin BaseâEmitter Shunt Resistors
⢠High DC Current Gain â hFE = 2500 (Typ) @ IC = 4.0 Adc
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃà ⢠Complementary Pairs Simplifies Designs
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Peak
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation* @ TA = 25_C
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
Symbol
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
MJD122
MJD127
100
100
5
8
16
120
20
0.16
1.75
0.014
â 65 to + 150
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
Symbol
Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
RθJC
6.25
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Ambient*
RθJA
71.4
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min Max
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ OFF CHARACTERISTICS
CollectorâEmitter Sustaining Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (IC = 30 mAdc, IB = 0)
VCEO(sus) 100
â
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Cutoff Current
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ (VCE = 50 Vdc, IB = 0)
ICEO
â
10
Unit
Vdc
Vdc
Vdc
Adc
mAdc
Watts
W/_C
Watts
W/_C
_C
Unit
_C/W
_C/W
Unit
Vdc
µAdc
* These ratings are applicable when surface mounted on the minimum pad sizes recommended.
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
Order this document
by MJD122/D
MJNDP1N22*
PNP
MJD127*
*Motorola Preferred Device
SILICON
POWER TRANSISTORS
8 AMPERES
100 VOLTS
20 WATTS
CASE 369Aâ13
CASE 369â07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
inches
mm
1
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