MJ802 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,100V,200W)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
High-Power NPN Silicon
Transistor
. . . for use as an output device in complementary audio amplifiers to 100–Watts
music power per channel.
• High DC Current Gain — hFE = 25–100 @ IC = 7.5 A
• Excellent Safe Operating Area
• Complement to the PNP MJ4502
Order this document
by MJ802/D
MJ802
30 AMPERE
POWER TRANSISTOR
NPN SILICON
100 VOLTS
200 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_MTÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{HCCCECBTOTAohEmaoooopXDt}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{esllllaeRlllilIeeeeteerlrMtmMarcccecDCatttttraU}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{ooooieAt–unelrrrrvMBrgR–––LirCacaEBEeeabeusRC}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{nmamsnoertiDsAHdrsviietteVtieTttASsaneeo}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{VsInt2trrRlNotoic5pVaVrlAGe_taagooa}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{,CtgCellSgittJoeaaeTunggJnEee}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{@ ucRCntichoITStna}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{CioRTrtnao=aIcCtTC}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{2itenSe5amgr°siCspe}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_teircatÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_ureRÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_angÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_e ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{SSTVVJyyVVθCCP,mmIICJECB}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{TEDECbbBBsORtoogll}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_–65V0M1ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{112t47a.93o.8000..la10005u7000+x45e}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ₂₀₀ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ^{CTOA(TS–}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{O2E0–143–A}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_)0A7 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{WW_UUVVVVAAC_a/nnddddddC_/tWiicccccc}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_tCtts ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
200
150
100
50
REV 7
0
0 20 40 60 80 100 120 140 160 180 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power–Temperature Derating Curve
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
1