MJ3281A Datasheet, PDF (1/6 Pages) Motorola, Inc – 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MJ3281A/D
™ Designer's Data Sheet
Complementary NPN-PNP
Silicon Power Bipolar Transistor
The MJ3281A and MJ1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
• Designed for 100 W Audio Frequency
• Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area — 1 A/100 V @ 1 sec
• High fT — 30 MHz Typical
MJ3^N2^PN81A*
MJ1^PN3^P02A*
*Motorola Preferred Device
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
250 WATTS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage — 1.5 V
Collector Current — Continuous
Collector Current — Peak ⁽¹⁾
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
CASE 1–07
TO–204AA
(TO–3)
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
200
200
7
200
15
25
1.5
250
1.43
– 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
Max
R_θJC
0.7
Unit
°C/W
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
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