MJ1000 Datasheet, PDF (1/4 Pages) Motorola, Inc – Medium-Power Complementary Silicon Transistors

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hFE = 6000 (Typ) @ IC = 3.0 Adc
• Monolithic Construction with Built–in Base–Emitter Shunt Resistors
Order this document
by MJ1000/D
NPN
MJ1000
MJ1001*
*Motorola Preferred Device
10 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 80 VOLTS
90 WATTS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_MTÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{HCCECBTOTAohEmaooopXDt}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{eslllaeRllilIeeeteerlrMtmMarccecDCattttraU}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{oooieAt–unelrrrvMBrgR––LirCacaEBeeabeusRC}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{nmasnoertiDsAHdrsvieteVtieTtASsaneo}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{VsInt2trRlNotoic5pVarlAGe_taagoa}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{,CtgCelSgitJoeaeTungJnEe}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{@ ucRCntichoITStna}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{CioRTrtnao=aIcCtTC}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{2itenSe5amgr_sisCpe}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_teircatÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_ureRÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_angÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_e ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_SSTVRJyyVVÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{CP,mmθIICECBTEDJbbBBsCOtoo}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_gll ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_MÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_J661000ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_0–05ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{50M1t50.19o.5..a900}ÎÎÎÎÎÎÎÎ_{01ÎÎÎÎÎÎÎ1+x4520}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_M0J88100ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{0CT0OA(1TS–}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{O2E0–143–A}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_)0A7 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_{W_WUUVVVAAC_a/nndddddC_/tWccccciit}ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ_Ctts ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
PNP
MJ900
MJ901
COLLECTOR
NPN
MJ1000
MJ1001
COLLECTOR
BASE
BASE
≈ 4.0 k ≈ 60
≈ 4.0 k ≈ 60
EMITTER
Figure 1. Darlington Circuit Schematic
EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
1