MHW930 Datasheet, PDF (1/3 Pages) Motorola, Inc – 30 W 925.960 MHz RF POWER AMPLIFIER

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET
Power Amplifier
Designed specifically for the Pan European Digital Extended EGSM base
station applications at 925 – 960 MHz. The MHW930 operates from a 26 volt
supply and requires 60 mW of RF input power.
• Specified 26 Volt and 25 °C Characteristics:
RF Input Power: 60 mW Max
RF Power Gain: 27 dB Min at 30 W Output Power
RF Output: 30 Watts Min at 1.0 dB Compression Point
Efficiency: 44% Min at 30 Watts Output Power
• 50 Ohm Input/Output Impedances
Order this document
by MHW930/D
MHW930
30 W
925 – 960 MHz
RF POWER AMPLIFIER
CASE 301AB–02, STYLE 1
MAXIMUM RATINGS
Rating
DC Supply Voltage
DC Bias Voltage
RF Input Power
RF Output Power
Operating Case Temperature Range
Storage Temperature Range
Symbol
VS
VB
Pin
Pout
TC
Tstg
Value
28
28
22
50
– 10 to + 100
– 30 to + 100
Unit
Vdc
Vdc
dBm
W
°C
°C
ELECTRICAL CHARACTERISTICS (VS = 26 Vdc; VBIAS = 26 Vdc; TC = +25°C; 50 Ω system)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
925
—
960
MHz
VS1 Quiescent Current (Pin = 0 mW)
Iqs1
—
65
—
mA
VS2 Quiescent Current (Pin = 0 mW)
Iqs2
—
130
—
mA
Power Gain (Pout = 30 W) (1)
Gp
27
—
31
dB
Output Power at 1 dB Compression
P1dB
30
35
—
Watts
EFficiency (Pout = 30 W) (1)
η
44
49
—
%
Input VSWR
VSWRIN
—
—
2:1
Harmonic 2 fo (Pout = 30 W) (1)
H2
—
—
–35
dBc
Harmonic 3 fo (Pout = 30 W) (1)
H3
—
—
–45
dBc
Reverse Intermodulation Distortion (Pcarrier = 30 W; Pinterferer at –70 dBc; fi
IMR
= fc ±600 kHz) (1)
—
—
–80
dBc
Load Mismatch Stress
(Pout = 30 W; Load VSWR = 10:1; All Phase Angles)
Stability
(Pout = 10 mW – 30 W; Load VSWR = 3:1; All Phase Angles;
TC = –10°C to 85°C)
(1) Adjust Pin for specified Pout.
ψ
No Degradation in Output Power
All Spurious Outputs More than 70 dB Below
Desired Signal
©MMOotTorOolRa,OInLc.A19R97F DEVICE DATA
MHW930
1