MHW913 Datasheet, PDF (1/4 Pages) Motorola, Inc – 14 WATT 880-915 MHz RF POWER AMPLIFIER

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
UHF Silicon FET Power Amplifier
Designed specifically for the Pan European digital 8.0 watt, GSM mobile
radio. The MHW913 is capable of wide power range control, operates from a
12.5 volt supply and requires less than 100 mW of RF input power.
• Specified 12.5 V Characteristics
RF Input Power ≤ 100 mW (20 dBm)
RF Output Power = 14 W
Minimum Gain = 21.5 dB
Minimum Efficiency = 35%
• 50 Ω Input/Output Impedance
• Guaranteed Stability and Ruggedness
• Epoxy Glass Substrate Eliminates Possibility of Substrate
Fracture
• Circuit board photomaster available upon request by
contacting RF Tactical Marketing in Phoenix, AZ.
Order this document
by MHW913/D
MHW913
14 WATT
880 – 915 MHz
RF POWER AMPLIFIER
CASE 301AB– 02, STYLE 1
MAXIMUM RATINGS (Flange Temperature = 25°C)
Rating
DC Supply Voltage
RF Input Power
RF Output Power
Storage Temperature
Operating Case Temperature
Symbol
Vbias,
VS2, VS3
Pin
Pout
TC
Tstg
Value
5.0
15.6
200
15
– 30 to +100
– 30 to +100
Unit
Volt
mW
Watt
°C
°C
ELECTRICAL CHARACTERISTICS (VS2 = VS3 = 12.5 Vdc, Vbias = 4.8 Vdc, TC = 25°C, 50 Ω system, unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Frequency Range
BW
880
915
MHz
Efficiency (Pout = 14 W) (1)
η
35
—
%
Power Gain (Pout = 14 W) (1)
Gp
21.5
—
dB
Harmonic Output (Pout = 14 W Reference) (1)
2fo
—
– 30
dBc
3fo
—
– 35
Input VSWR (Pout = 14 W) (1)
VSWRin
—
3:1
Linearity — % AM in Output Pout = 0.02 to 14 W; 135 kHz, 1.0% AM on Input (1)
—
6.0
%
Output Power at Decreased Voltage
(Pin = 100 mW, VS2 = VS3 = 10.8 Vdc) (1)
(1) Adjust Pin for specified Pout.
Pout
Watt
10
—
(continued)
REV 3
©MMOotoTrOolaR, OIncL.A19R97F DEVICE DATA
MHW913
1