MHW2727-3 Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF Silicon FET Power Amplifier

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET
Power Amplifiers
Designed for 7.5 volt UHF power amplifier applications in industrial and
commercial equipment primarily for hand portable radios.
• Specified 7.5 Volt Characteristics:
RF Input Power: 20 mW (13 dBm)
RF Output Power: 7 W
Minimum Gain (Vcont = 7 V): 25.5 dB
Harmonics: – 35 dBc Max @ 2.0 fo 350 – 360 MHz
– 40 dBc Max @ 2.0 fo 360 – 400 MHz
• Epoxy Glass PCB Construction Gives Consistent Performance
and Reliability
• 50 Ω Input/Output Impedances
• Guaranteed Stability and Ruggedness
Order this document
by MHW2727/D
MHW2727-3
7 W,
350 – 400 MHZ
UHF POWER AMPLIFIERS
MAXIMUM RATINGS (Flange Temperature = 25°C)
Rating
DC Supply Voltage (Pins 3, 4)
DC Control Voltage (Pin 2)
RF Input Power
RF Output Power (VDD1, ₂ = 9 V)
Operating Case Temperature Range
Storage Temperature Range
CASE 420AC–01 , STYLE 1
Symbol
Value
Unit
VDD1, ₂
9
Vdc
Vcont
9
Vdc
Pin
40
mW
Pout
9
W
TC
– 30 to +100
°C
Tstg
– 30 to +100
°C
© MMoOtorToOla,RInOc.L1A99R7 F DEVICE DATA
MHW2727–3
1