MHW2707A1 Datasheet, PDF (1/4 Pages) Motorola, Inc – UHF Silicon FET Power Amplifier

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
UHF Silicon FET Power Amplifier
Designed for 7.5 volt UHF power amplifier applications in industrial and
commercial equipment primarily for hand portable radios.
• Specified 7.5 Volt Characteristics:
RF Input Power: 1 mW (0 dBm)
RF Output Power: 7 W
Minimum Gain (Vcont = 7 V): 38.5 dB
Harmonics: – 35 dBc Max @ 2 fo
• Provides Wideband Performance
• Meets European Transient Specification (ETS 300 113)
• Epoxy Glass PCB Construction Gives Consistent Performance
and Reliability
• 50 Ω Input/Output Impedances
• Guaranteed Stability and Ruggedness
Order this document
by MHW2707A/D
MHW2707A1
7W
400–470 MHz
UHF POWER AMPLIFIER
MAXIMUM RATINGS (Flange Temperature = 25°C)
Rating
DC Supply Voltage (Pins 2, 4, 5)
DC Control Voltage (Pin 3)
RF Input Power
RF Output Power (VDD1, _{2, 3} = 9 V)
Operating Case Temperature Range
Storage Temperature Range
CASE 301AL–01, STYLE 1
Symbol
Value
Unit
VDD1, _{2, 3}
9
Vdc
Vcont
7
Vdc
Pin
2
mW
Pout
9
W
TC
– 30 to +80
°C
Tstg
– 30 to +80
°C
© MMoOtorToOla,RInOc.L1A99R7 F DEVICE DATA
MHW2707A1
1