MHPA18010 Datasheet, PDF (1/2 Pages) Motorola, Inc – CDMA BAND RF LINEAR LDMOS AMPLIFIER

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MHPA18010/D
The RF Line
CDMA Band
RF Linear LDMOS Amplifier
Designed for Class AB amplifier applications in 50 ohm systems operating in
the 1800 to 1900 MHz frequency band. A silicon FET design provides
outstanding linearity and gain. In addition, the excellent group delay and phase
linearity characteristics are ideal for digital CDMA and GSM modulation
systems.
• Typical CDMA Performance: 1840 MHz, 28 Volts
IS–95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
• Adjacent Channel Power: –51 dBc @ 30 dBm Average Power,
885 kHz Channel Spacing
• Power Gain: 24.5 dB Min (@ f = 1840 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
MHPA18010
1805–1880 MHz
10 W, 24.5 dB
RF HIGH POWER LDMOS AMPLIFIER
CASE 301AP–02, STYLE 3
MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power (Single Carrier CW)
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
Value
30
+20
–40 to +100
–20 to +100
Unit
Vdc
dBm
°C
°C
ELECTRICAL CHARACTERISTICS (V_DD = 28 Vdc, V_BIAS ≅ 8 V Set for Supply Current of 600 mA, T_C = 25°C, 50 Ω System)
Characteristic
Symbol
Min
Typ
Max
Unit
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Comp.
(f = 1840 MHz)
(f = 1805–1880 MHz)
(f = 1840 MHz)
I_DD
G_p
G_F
P1dB
—
600
—
24.5 25.5
—
—
0.2
0.5
—
41.5
—
mA
dB
dB
dBm
Input VSWR
Noise Figure
(f = 1805–1880 MHz)
VSWR_in
—
1.5:1
2:1
(f = 1840 MHz)
NF
—
8
10
dB
Adjacent Channel Power Rejection @ 30 dBm Average Power,
1.23 MHz BW, 885 kHz Channel Spacing
ACPR
—
–58
–51
dBc
REV 0
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MHPA18010
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