MHL9318 Datasheet, PDF (1/4 Pages) Motorola, Inc – THE RF LINE CELLULAR BAND RF LINEAR LDMOS AMPLIFIER

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MHL9318/D
The RF Line
Cellular Band
RF Linear LDMOS Amplifier
Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA and CDMA.
• Third Order Intercept: 49 dBm Typ
• Power Gain: 17.5 dB Typ (@ f = 880 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• For Use in TDMA and CDMA Multi–Carrier Applications
MHL9318
3.0 W, 17.5 dB
860–900 MHz
RF LINEAR LDMOS AMPLIFIER
CASE 301AS–01, STYLE 1
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
ELECTRICAL CHARACTERISTICS (V_DD = 28 Vdc, T_C = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
(f = 880 MHz)
Gain Flatness
(f = 860–900 MHz)
Power Output @ 1 dB Comp.
(f = 880 MHz)
Input VSWR
(f = 860–900 MHz)
Output VSWR
(f = 860–900 MHz)
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
I_DD
G_p
G_F
P_out 1 dB
VSWR_in
VSWR_out
ITO
Noise Figure
(f = 960 MHz)
NF
Value
30
+20
–40 to +100
–20 to +100
Min
Typ
Max
—
500
560
17
17.5 18.5
—
0.1
0.2
—
35.5
—
—
1.2:1 1.5:1
—
1.2:1 1.5:1
47
49
—
—
3
4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
REV 2
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MHL9318
1