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MHL9236 Datasheet, PDF (1/4 Pages) Motorola, Inc – CELLULAR BAND RF LINEAR LDMOS AMPLIFIERS | |||
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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MHL9236/D
The RF Line
Cellular Band
RF Linear LDMOS Amplifiers
Designed for ultraâlinear amplifier applications in 50 ohm systems operating in
the cellular frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for the most demanding analog or digital modulation
systems, such as TDMA, CDMA or QPSK.
⢠Third Order Intercept: 47 dBm Typ
⢠Power Gain: 30.5 dB Typ (@ f = 880 MHz)
⢠Excellent Phase Linearity and Group Delay Characteristics
⢠Ideal for Feedforward Base Station Applications
⢠For Use in TDMA, CDMA, QPSK or Analog Systems
MHL9236
MHL9236M
800â960 MHz
2.5 W, 30.5 dB
RF LINEAR LDMOS AMPLIFIERS
CASE 301APâ02, STYLES 1, 2
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
VDD
Pin
Tstg
TC
ELECTRICAL CHARACTERISTICS (VDD = 26 Vdc, TC = 25°C; 50 ⦠System)
Characteristic
Symbol
Supply Current
Power Gain
(f = 880 MHz)
Gain Flatness
(f = 800â960 MHz)
Power Output @ 1 dB Comp.
(f = 880 MHz)
Input VSWR
(f = 800â960 MHz)
Output VSWR
(f = 800â960 MHz)
Third Order Intercept (f1 = 879 MHz, f2 = 884 MHz)
IDD
Gp
GF
Pout 1 dB
VSWRin
VSWRout
ITO
Noise Figure
(f = 800â960 MHz)
NF
Value
30
+10
â40 to +100
â20 to +100
Min
Typ
Max
â
550
620
29.5 30.5 31.5
â
0.1
0.3
33.0 34.0
â
â
1.2:1 1.5:1
â
1.2:1 1.5:1
46.0 47.0
â
â
3.5
4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
REV 2
 MMoOtoTroOla,RInOc.L2A00R2 F DEVICE DATA For More Information On This Product,
Go to: www.freescale.com
MHL9236 MHL9236M
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