MHL21336 Datasheet, PDF (1/4 Pages) Motorola, Inc – 3G BAND RF LINEAR LDMOS AMPLIFIER

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MHL21336/D
The RF Line
3G Band
RF Linear LDMOS Amplifier
Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the 3G frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital CDMA modulation systems.
• Third Order Intercept: 45 dBm Typ
• Power Gain: 31 dB Typ (@ f = 2140 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
MHL21336
2110–2170 MHz
3.0 W, 31 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP–02, STYLE 1
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
ELECTRICAL CHARACTERISTICS (V_DD = 26 Vdc, T_C = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
(f = 2140 MHz)
Gain Flatness
(f = 2110–2170 MHz)
Power Output @ 1 dB Comp.
(f = 2140 MHz)
Input VSWR
(f = 2110–2170 MHz)
Third Order Intercept (f1 = 2137 MHz, f2 = 2142 MHz)
I_DD
G_p
G_F
P_out 1 dB
VSWR_in
ITO
Noise Figure
(f = 2170 MHz)
NF
Value
30
+5
–40 to +100
–20 to +100
Min
Typ
Max
—
500
525
30
31
32
—
0.15
0.4
34
35
—
—
1.2:1 1.5:1
44
45
—
—
4.5
5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
REV 3
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MHL21336
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