MHL19936 Datasheet, PDF (1/4 Pages) Motorola, Inc – PCS BAND RF LINEAR LDMOS AMPLIFIER

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MHL19936/D
The RF Line
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
• Third Order Intercept: 49.5 dBm Typ
• Power Gain: 29 dB Typ (@ f = 1960 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
MHL19936
1900–2000 MHz
12 W, 29 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AY–01, STYLE 1
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
ELECTRICAL CHARACTERISTICS (V_DD = 26 Vdc, T_C = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Comp.
(f = 1960 MHz)
(f = 1900–2000 MHz)
(f = 1950 MHz)
I_DD
G_p
G_F
P1dB
Input VSWR
Third Order Intercept
(f = 1900–2000 MHz)
(f1 = 1950 MHz,
f2 = 1955 MHz)
VSWR_in
ITO
Noise Figure
(f = 2000 MHz)
NF
Value
30
+16
–40 to +100
–20 to +100
Min
Typ
Max
—
1.4
1.45
28
29
30
—
0.2
0.4
40
41
—
—
1.2:1 1.5:1
49
49.5
—
—
4.2
4.5
Unit
Vdc
dBm
°C
°C
Unit
A
dB
dB
dBm
dBm
dB
REV 3
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MHL19936
1