MHL19926 Datasheet, PDF (1/2 Pages) Motorola, Inc – PCS Band RF Linear LDMOS Amplifier

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MHL19926/D
The RF Line
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra--linear amplifier applications in 50 Ohm systems operating
in the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA, EDGE
and CDMA.
• Third Order Intercept Point: 50 dBm Typ
• Power Gain: 29.4 dB Typ (@ f = 1960 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Application
MHL19926
1930--1990 MHz, 10 W, 29.4 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AY--01, STYLE 1
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
Value
30
+17
--40 to +100
--20 to +100
ELECTRICAL CHARACTERISTICS (T_C = +25°C; V_DD = 26 Vdc; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
Gain Flatness
Power Output @ 1 dB Compression
(f = 1960 MHz)
(f = 1930--1990 MHz)
(f = 1960 MHz)
I_DD
G_p
G_F
P1 dB
Input VSWR
Third Order Intercept
(f = 1930--1990 MHz)
(f1 =1957 MHz, f2=1962 MHz)
VSWR_in
ITO
Noise Figure
(f = 1990 MHz)
NF
Min
Typ
Max
—
1
1.05
28.4 29.4 30.4
—
0.3
0.5
39
40
—
—
1.2:1 1.5:1
49.5
50
—
—
4.2
5
Unit
Vdc
dBm
°C
°C
Unit
A
dB
dB
dBm
dBm
dB
NOTE -- CAUTION -- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
 M^Mo^Oto^Tro^Ola,^RIn^Oc.^L2^A00^R3 ^{F DEVICE DATA} _{For More Information On This Product,}
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MHL19926
1