MHL19338 Datasheet, PDF (1/2 Pages) Motorola, Inc – PCS BAND RF LINEAR LDMOS AMPLIFIER

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
• Third Order Intercept: 46 dBm Typ
• Power Gain: 30 dB Typ (@ f = 1960 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
Order this document
by MHL19338/D
MHL19338
1900–2000 MHz
4.0 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP–02, STYLE 1
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
ELECTRICAL CHARACTERISTICS (V_DD = 28 Vdc, T_C = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
(f = 1960 MHz)
Gain Flatness
(f = 1900–2000 MHz)
Power Output @ 1 dB Comp.
(f = 1950 MHz)
Input VSWR
(f = 1900–2000 MHz)
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz)
I_DD
G_p
G_F
P_out 1 dB
VSWR_in
ITO
Noise Figure
(f = 2000 MHz)
NF
Value
30
+10
–40 to +100
–20 to +100
Min
Typ
Max
—
500
525
29
30
31
—
0.1
0.4
35
36
—
—
1.2:1 1.5:1
45
46
—
—
4.2
4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
REV 2
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MHL19338
1