MHL18336 Datasheet, PDF (1/2 Pages) Motorola, Inc – PCS BAND RF LINEAR LDMOS AMPLIFIER

MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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by MHL18336/D
The RF Line
PCS Band
RF Linear LDMOS Amplifier
Designed for ultra–linear amplifier applications in 50 ohm systems operating in
the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
• Third Order Intercept: 46 dBm Typ
• Power Gain: 30 dB Typ (@ f =1850 MHz)
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
MHL18336
1800–1900 MHz
4 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP–02, STYLE 1
ABSOLUTE MAXIMUM RATINGS (T_C = 25°C unless otherwise noted)
Rating
DC Supply Voltage
RF Input Power
Storage Temperature Range
Operating Case Temperature Range
Symbol
V_DD
P_in
T_stg
T_C
ELECTRICAL CHARACTERISTICS (V_DD = 26 Vdc, T_C = 25°C; 50 Ω System)
Characteristic
Symbol
Supply Current
Power Gain
(f =1850 MHz)
Gain Flatness
(f = 1800–1900 MHz)
Power Output @ 1 dB Comp.
(f = 1850 MHz)
Input VSWR
(f = 1800–1900 MHz)
Third Order Intercept (f1 = 1847 MHz, f2 = 1852 MHz)
I_DD
G_p
G_F
P_out 1 dB
VSWR_in
ITO
Noise Figure
(f = 1850 MHz)
NF
Value
30
+10
–40 to +100
–20 to +100
Min
Typ
Max
—
500
525
29
30
31
—
0.2
0.4
35
36
—
—
1.2:1 1.5:1
45
46
—
—
4.2
4.5
Unit
Vdc
dBm
°C
°C
Unit
mA
dB
dB
dBm
dBm
dB
REV 1
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MHL18336
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