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MGY40N60 Datasheet, PDF (1/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
⢠Designer's Data Sheet
Insulated Gate Bipolar Transistor
NâChannel EnhancementâMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltageâblocking capability. Short circuit rated IGBTâs are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
⢠Industry Standard High Power TOâ264 Package (TOâ3PBL)
⢠High Speed Eoff: 60 mJ per Amp typical at 125°C
⢠High Short Circuit Capability â 10 ms minimum
⢠Robust High Voltage Termination
⢠Robust RBSOA
C
Order this document
by MGY40N60/D
MGY40N60
Motorola Preferred Device
IGBT IN TOâ264
40 A @ 90°C
66 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
C
G
E
E
CASE 340Gâ02, Style 5
TOâ264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâGate Voltage (RGE = 1.0 Mâ¦)
GateâEmitter Voltage â Continuous
Collector Current â Continuous @ TC = 25°C
â Continuous @ TC = 90°C
â Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
±20
Vdc
66
Adc
40
132
Apk
260
Watts
2.08
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 â¦)
Thermal Resistance â Junction to Case â IGBT
Thermal Resistance â Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 5 seconds
Mounting Torque, 6â32 or M3 screw
TJ, Tstg
â 55 to 150
°C
tsc
10
ms
RθJC
0.48
RθJA
35
TL
260
10 lbfSin (1.13 NSm)
°C/W
°C
(1) Pulse width is limited by maximum junction temperature.
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
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