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MGY30N60D Datasheet, PDF (1/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor with Anti-Parallel Diode | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
⢠Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
NâChannel EnhancementâMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is coâpackaged
with a soft recovery ultraâfast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltageâblocking capability. Short circuit rated IGBTâs are specifi-
cally suited for applications requiring a guaranteed short circuit
withstand time such as Motor Control Drives. Fast switching
characteristics result in efficient operations at high frequencies.
Coâpackaged IGBTâs save space, reduce assembly time and cost.
⢠Industry Standard High Power TOâ264 Package (TOâ3PBL)
⢠High Speed Eoff: 60 mJ per Amp typical at 125°C
⢠High Short Circuit Capability â 10 ms minimum
⢠Soft Recovery Free Wheeling Diode is included in the package
⢠Robust High Voltage Termination
⢠Robust RBSOA
C
G
E
Order this document
by MGY30N60D/D
MGY30N60D
Motorola Preferred Device
IGBT & DIODE IN TOâ264
30 A @ 90°C
50 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
G
C
E
CASE 340Gâ02, Style 5
TOâ264
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâGate Voltage (RGE = 1.0 Mâ¦)
GateâEmitter Voltage â Continuous
Collector Current â Continuous @ TC = 25°C
â Continuous @ TC = 90°C
â Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
±20
Vdc
50
Adc
30
100
Apk
202
Watts
1.61
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
â 55 to 150
°C
Short Circuit Withstand Time
(VCC = 360 Vdc, VGE = 15 Vdc, TJ = 25°C, RG = 20 â¦)
tsc
10
ms
Thermal Resistance â Junction to Case â IGBT
â Junction to Case â Diode
â Junction to Ambient
RθJC
RθJC
RθJA
0.62
°C/W
1.41
35
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 5 seconds
TL
260
°C
Mounting Torque, 6â32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature.
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Preferred devices are Motorola recommended choices for future use and best overall value.
© MMoototororloa,laIncT.M19O95S Power MOSFET Transistor Device Data
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