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MGW21N60ED Datasheet, PDF (1/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Preliminary Data Sheet
Insulated Gate Bipolar Transistor
NâChannel EnhancementâMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is coâpackaged
with a soft recovery ultraâfast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltageâblocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Coâpackaged IGBTs save space, reduce assembly
time and cost. This new Eâseries introduces an energy efficient,
ESD protected, and rugged short circuit device.
⢠Industry Standard TOâ247 Package
C
⢠High Speed: Eoff = 65 mJ/A typical at 125°C
⢠High Voltage Short Circuit Capability â 10 ms minimum at
125°C, 400 V
⢠Low OnâVoltage â 2.1 V typical at 20 A, 125°C
G
⢠Soft Recovery Free Wheeling Diode is included in the Package
⢠Robust High Voltage Termination
⢠ESD Protection GateâEmitter Zener Diodes
E
Order this document
by MGW21N60ED/D
MGW21N60ED
IGBT IN TOâ247
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
ONâVOLTAGE
G
C
E
CASE 340Kâ01,
TOâ247 AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
CollectorâEmitter Voltage
CollectorâGate Voltage (RGE = 1.0 Mâ¦)
GateâEmitter Voltage â Continuous
Collector Current â Continuous @ TC = 25°C
Collector Current â Continuous @ TC = 90°C
Collector Current â Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
600
VCGR
600
VGE
± 20
IC25
31
IC90
21
ICM
42
PD
142
1.14
Operating and Storage Junction Temperature Range
TJ, Tstg
â 55 to 150
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 â¦)
tsc
10
Thermal Resistance â Junction to Case â IGBT
Thermal Resistance â Junction to Diode
Thermal Resistance â Junction to Ambient
RθJC
0.88
RθJC
1.4
RθJA
45
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 5 seconds
TL
260
Mounting Torque, 6â32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
ms
°C/W
°C
© MMoototororloa,laIncIG. 1B99T7 Device Data
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