MGP20N35CL Datasheet, PDF (1/6 Pages) Motorola, Inc – SMARTDISCRETES Internally Clamped, N-Channel IGBT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advanced Information
SMARTDISCRETES™
Internally Clamped, N-Channel
IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES™ monolithic circuitry for
usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
Order this document
by MGP20N35CL/D
MGP20N35CL
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.8 VOLTS
350 VOLTS (CLAMPED)
®
C
G
G
Rge
C
E
CASE 221A–06, Style 9
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current — Continuous @ TC = 25°C
t Reversed Collector Current – pulse width 100 ms
Total Power Dissipation @ TC = 25°C (TO–220)
Electrostatic Voltage — Gate–Emitter
VCES
VCGR
VGE
IC
ICR
PD
ESD
CLAMPED
CLAMPED
CLAMPED
20
12
150
3.5
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
– 55 to 175
R_qJC
1.0
R_qJA
62.5
TL
275
10 lbfin (1.13 Nm)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse Collector–Emitter Avalanche Energy
@ Starting TJ = 25°C
@ Starting TJ = 150°C
EAS
550
150
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
kV
°C
°C/W
°C
mJ
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