MGP20N14CL Datasheet, PDF (1/4 Pages) Motorola, Inc – Internally Clamped, N-Channel IGBT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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SMARTDISCRETES™
Internally Clamped, N-Channel
IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETES™ monolithic circuitry for
usage as an Ignition Coil Driver.
• Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability
Order this document
by MGP20N14CL/D
MGP20N14CL
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.9 VOLTS
135 VOLTS (CLAMPED)
®
C
G
G
C
E
CASE 221A–06, Style 9
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
" ^{Collector Current — Continuous @ TC = 25°C}
Collector Current — Single Pulsed (tp = 10 ms)
Total Power Dissipation @ TC = 25°C (TO–220)
Derate Above 25°C
VCES
VCGR
VGE
IC
ICM
PD
CLAMPED
CLAMPED
CLAMPED
20
60
150
1.0
Operating and Storage Temperature Range
Single Pulse Collector–Emitter Avalanche Energy @ Starting TJ = 25°C
(VCC = 80 V, VGE = 5 V, Peak IL = 10 A, L = 10 mH)
TJ, Tstg
EAS
– 55 to 175
500
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
Thermal Resistance — Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
R_qJC
1.0
R_qJA
62.5
TL
275
10 lbfin (1.13 Nm)
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
W/°C
°C
mJ
°C/W
°C
REV 1
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