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MGP14N60E Datasheet, PDF (1/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
⢠Designer's Data Sheet
Insulated Gate Bipolar Transistor
NâChannel EnhancementâMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltageâblocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. This new Eâseries introduces an Energyâefficient,
ESD protected, and short circuit rugged device.
⢠Industry Standard TOâ220 Package
⢠High Speed: Eoff = 60 mJ/A typical at 125°C
⢠High Voltage Short Circuit Capability â 10 ms minimum at 125°C, 400 V
⢠Low OnâVoltage 2.0 V typical at 10 A, 125°C
⢠Robust High Voltage Termination
C
⢠ESD Protection GateâEmitter Zener Diodes
G
E
Order this document
by MGP14N60E/D
MGP14N60E
IGBT IN TOâ220
14 A @ 90°C
18 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ONâVOLTAGE
G
C
E
CASE 221Aâ06
TOâ220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâGate Voltage (RGE = 1.0 Mâ¦)
GateâEmitter Voltage â Continuous
Collector Current â Continuous @ TC = 25°C
â Continuous @ TC = 90°C
â Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
±20
Vdc
18
Adc
14
28
Apk
110
Watts
0.88
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 â¦)
Thermal Resistance â Junction to Case â IGBT
â Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 5 seconds
Mounting Torque, 6â32 or M3 screw
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
TJ, Tstg
â 55 to 150
°C
tsc
10
ms
RθJC
RθJA
TL
1.1
65
260
10 lbfSin (1.13 NSm)
°C/W
°C
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Designerâs is a trademark of Motorola, Inc.
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
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