MCR12DSM Datasheet, PDF (1/6 Pages) Motorola, Inc – Silicon Controlled Rectifiers

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR12DSM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
MCR12DSM
MCR12DSN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
A
• Available in Two Package Styles
Surface Mount Lead Form — Case 369A
Miniature Plastic Package — Straight Leads — Case 369
ORDERING INFORMATION
G
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MCR12DSN
K
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MCR12DSNT4
• To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MCR12DSN–1
SCRs
12 AMPERES RMS
600 thru 800 VOLTS
A
K
AG
CASE 369A–13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive Off–State Voltage ⁽¹⁾
Peak Repetitive Reverse Voltage
W (TJ = –40 to 110°C, RGK = 1.0 K )
MCR12DSM
MCR12DSN
Symbol
VDRM
VRRM
Value
600
800
Unit
Volts
On–State RMS Current
(All Conduction Angles; TC = 75°C)
Average On–State Current (All Conduction Angles; TC = 75°C)
Peak Non–Repetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
IT(RMS)
IT(AV)
ITSM
I2t
Amps
12
7.6
100
41
A2sec
Peak Gate Power
m (Pulse Width ≤ 10 sec, TC = 75°C)
Average Gate Power
(t = 8.3 msec, TC = 75°C)
m Peak Gate Current (Pulse Width ≤ 10 sec, TC = 75°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
PGM
PG(AV)
IGM
TJ
Tstg
5.0
0.5
2.0
–40 to 110
–40 to 150
Watts
Amps
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient ⁽²⁾
R_qJC
R_qJA
R_qJA
2.2
°C/W
88
80
Maximum Lead Temperature for Soldering Purposes ⁽³⁾
TL
260
°C
W (1) VDRM for all types can be applied on a continuous basis. Ratings apply for negative gate voltage or RGK = 1.0 K ; positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that
the voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1997