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MCR12DCM Datasheet, PDF (1/6 Pages) Motorola, Inc – Silicon Controlled Rectifiers | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MCR12DCM/D
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
MCR12DCM
MCR12DCN
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
⢠Small Size
⢠Passivated Die for Reliability and Uniformity
⢠Low Level Triggering and Holding Characteristics
A
⢠Available in Two Package Styles
Surface Mount Lead Form â Case 369A
Miniature Plastic Package â Straight Leads â Case 369
ORDERING INFORMATION
G
⢠To Obtain âDPAKâ in Surface Mount Leadform (Case 369A)
Shipped in Sleeves â No Suffix, i.e. MCR12DCN
K
Shipped in 16 mm Tape and Reel â Add âT4â Suffix to Device Number,
i.e. MCR12DCNT4
⢠To Obtain âDPAKâ in Straight Lead Version (Case 369) Shipped in Sleeves â
Add ââ1â Suffix to Device Number, i.e. MCR12DCNâ1
SCRs
12 AMPERES RMS
600 thru 800 VOLTS
A
K
AG
CASE 369Aâ13
STYLE 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Peak Repetitive OffâState Voltage (1)
Peak Repetitive Reverse Voltage
(TJ = â40 to 125°C)
MCR12DCM
MCR12DCN
Symbol
VDRM
VRRM
Value
600
800
Unit
Volts
OnâState RMS Current
(All Conduction Angles; TC = 90°C)
Average OnâState Current (All Conduction Angles; TC = 90°C)
Peak NonâRepetitive Surge Current
(One Half Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width ⤠10 msec, TC = 90°C)
Average Gate Power
(t = 8.3 msec, TC = 90°C)
Peak Gate Current (Pulse Width ⤠10 msec, TC = 90°C)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
IT(RMS)
IT(AV)
ITSM
I2t
PGM
PG(AV)
IGM
TJ
Tstg
12
7.6
100
41
5.0
0.5
2.0
â40 to 125
â40 to 150
Amps
A2sec
Watts
Amps
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance â Junction to Case
Thermal Resistance â Junction to Ambient
Thermal Resistance â Junction to Ambient (2)
RqJC
RqJA
RqJA
2.2
°C/W
88
80
Maximum Lead Temperature for Soldering Purposes (3)
TL
260
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8â³ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
1
© Motorola, Inc. 1997
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