MCM69F735 Datasheet, PDF (1/16 Pages) Motorola, Inc – 128K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM

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SEMICONDUCTOR TECHNICAL DATA
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128K x 36 Bit Flow–Through
BurstRAM™ Synchronous
Fast Static RAM
The MCM69F735 is a 4M bit synchronous fast static RAM designed to provide
a burstable, high performance, secondary cache for the PowerPC™ and other
high performance microprocessors. It is organized as 128K words of 36 bits
each. This device integrates input registers, a 2–bit address counter, and high
speed SRAM onto a single monolithic circuit for reduced parts count in cache
data RAM applications. Synchronous design allows precise cycle control with the
use of an external clock (K).
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G) and linear burst order (LBO) are clock (K) controlled through positive–
edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM69F735 (burst sequence
operates in linear or interleaved mode dependent upon the state of LBO) and
controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-
nous write enable (SW) are provided to allow writes to either individual bytes or
to all bytes. The four bytes are designated as “a”, “b”, “c”, and “d”. SBa controls
DQa, SBb controls DQb, etc. Individual bytes are written if the selected byte
writes SBx are asserted with SW. All bytes are written if either SGW is asserted
or if all SBx and SW are asserted.
For read cycles, a flow–through SRAM allows output data to simply flow freely
from the memory array.
The MCM69F735 operates from a 3.3 V core power supply and all outputs
operate on a 3.3 V or 2.5 V power supply. All inputs and outputs are JEDEC stan-
dard JESD8–5 compatible.
• MCM69F735 Speed Options
Flow–Through
Speed
tKHKH
tKHQV
Setup
Hold
IDD
150 MHz
6.7 ns
6 ns
0.5 ns
1 ns
400 mA
133 MHz
7.5 ns
6.5 ns
0.5 ns
1 ns
375 mA
117 MHz
8.5 ns
7 ns
0.5 ns
1 ns
350 mA
• 3.3 V + 10%, – 5% Core Power Supply, Operates with a 3.3 V or 2.5 V I/O
Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Single–Cycle Deselect Timing
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• PB1 Version 2.0 Compatible
• JEDEC Standard 119–Pin PBGA Package
MCM69F735
ZP PACKAGE
PBGA
CASE 999–01
BurstRAM is a trademark of Motorola, Inc.
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
5/23/97
©_MM_Oo_Tto_Orol_Ra,_OInc_L._A19_F97_{AST SRAM}
MCM69F735
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