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MCM63P837 Datasheet, PDF (1/30 Pages) Motorola, Inc – 256K x 36 and 512K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
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256K x 36 and 512K x 18 Bit
Pipelined BurstRAM
Synchronous Fast Static RAM
The MCM63P837 and MCM63P919 are 8M–bit synchronous fast static RAMs
designed to provide a burstable, high performance, secondary cache for the
PowerPC™ and other high performance microprocessors. The MCM63P837
(organized as 256K words by 36 bits) and the MCM63P919 (organized as 512K
words by 18 bits) are fabricated in Motorola’s high performance silicon gate
CMOS technology. Synchronous design allows precise cycle control with the use
of an external clock (K).
Addresses (SA), data inputs (DQx), and all control signals except output
enable (G), sleep mode (ZZ), and linear burst order (LBO) are clock (K)
controlled through positive–edge–triggered noninverting registers.
Bursts can be initiated with either ADSP or ADSC input pins. Subsequent burst
addresses can be generated internally by the MCM63P837 and MCM63P919
(burst sequence operates in linear or interleaved mode dependent upon the state
of LBO) and controlled by the burst address advance (ADV) input pin.
Write cycles are internally self–timed and are initiated by the rising edge of the
clock (K) input. This feature eliminates complex off–chip write pulse generation
and provides increased timing flexibility for incoming signals.
Synchronous byte write (SBx), synchronous global write (SGW), and synchro-
nous write enable (SW) are provided to allow writes to either individual bytes or
to all bytes. The bytes are designated as “a”, “b”, etc. SBa controls DQa, SBb
controls DQb, etc. Individual bytes are written if the selected byte writes SBx are
asserted with SW. All bytes are written if either SGW is asserted or if all SBx and
SW are asserted.
For read cycles, pipelined SRAMs output data is temporarily stored by an
edge–triggered output register and then released to the output buffers at the next
rising edge of clock (K).
The MCM63P837 and MCM63P919 operate from a 3.3 V core power supply.
All outputs operate on a 2.5 V or 3.3 V power supply. All inputs and outputs are
JEDEC standard JESD8–A and JESD8–5 compatible.
• MCM63P837/MCM63P919–225 = 2.6 ns Access/4.4 ns Cycle (225 MHz)
MCM63P837/MCM63P919–200 = 3 ns Access/5 ns Cycle (200 MHz)
MCM63P837/MCM63P919–166 = 3.5 ns Access/6 ns Cycle (166 MHz)
• 3.3 V ±5% Core Power Supply, 2.5 V or 3.3 V I/O Supply
• ADSP, ADSC, and ADV Burst Control Pins
• Selectable Burst Sequencing Order (Linear/Interleaved)
• Single–Cycle Deselect Timing
• Internally Self–Timed Write Cycle
• Byte Write and Global Write Control
• Sleep Mode (ZZ)
• Simplified JTAG
• JEDEC Standard 100–Pin TQFP and 119–Bump PBGA Packages
MCM63P837
MCM63P919
TQ PACKAGE
TQFP
CASE 983A–01
ZP PACKAGE
PBGA
CASE 999–02
The PowerPC name is a trademark of IBM Corp., used under license therefrom.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
REV 1
8/27/99
©MMOoTtoOrolRa,OIncL.A19F99AST SRAM
For More Information On This Product,
Go to: www.freescale.com
MCM63P837•MCM63P919
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