MBRM120LT3 Datasheet, PDF (1/4 Pages) Motorola, Inc – SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES 20 VOLTS

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MBRM120LT3/D
Advance Information
Surface Mount
Schottky Power Rectifier
MBRM120LT3
POWERMITE^® Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal
and epitaxial construction that produces optimal forward voltage drop–reverse current
tradeoff. The advanced packaging techniques provide for a highly efficient micro
miniature, space saving surface mount Rectifier. With its unique heatsink design, the
Powermite has the same thermal performance as the SMA while being 50% smaller in
footprint area, and delivering one of the lowest height profiles, < 1.1 mm in the industry.
Because of its small size, it is ideal for use in portable and battery powered products such
as cellular and cordless phones, chargers, notebook computers, printers, PDAs and
PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery
protection, and “Oring” of multiple supply voltages and any other application where
performance and size are critical.
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
CATHODE
ANODE
Features:
• Low Profile — Maximum Height of 1.1 mm
• Small Footprint — Footprint Area of 8.45 mm2
• Low VF Provides Higher Efficiency and Extends Battery Life
• Supplied in 12 mm Tape and Reel — 12,000 Units per Reel
• Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink
CASE 457–03
ISSUE B
Mechanical Characteristics:
• Powermite is JEDEC Registered as D0–216AA
• Case: Molded Epoxy
• Epoxy Meets UL94, VO at 1/8″
• Weight: 62 mg (approximately)
• Device Marking: BCD
• Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol
Value
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
20
VRWM
VR
Average Rectified Forward Current (At Rated VR, TC = 135°C)
IO
1.0
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 135°C)
IFRM
2.0
Non–Repetitive Peak Surge Current
IFSM
50
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage / Operating Case Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
THERMAL CHARACTERISTICS
Tstg, TC
TJ
dv/dt
–55 to 150
–55 to 125
10,000
Thermal Resistance – Junction–to–Lead (Anode) (1)
Thermal Resistance – Junction–to–Tab (Cathode) (1)
Thermal Resistance – Junction–to–Ambient (1)
(1) Pulse Test: Pulse Width ≤ 250 µs, Duty Cycle ≤ 2%.
Rtjl
35
Rtjtab
15
Rtja
248
This document contains information on a new product. Specifications and information herein are subject to change without notice.
POWERMITE is a registered trademark of MicroSemi Corporation
Unit
V
A
A
A
°C
°C
V/ms
°C/W
(Replaces MBRM5817T3/D)
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