M4N26 Datasheet, PDF (1/8 Pages) Motorola, Inc – 6-Pin DIP Optoisolators Transistor Output

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by M4N26/D
6-Pin DIP Optoisolators
Transistor Output
The M4N26 device consists of a gallium arsenide infrared emitting diode
optically coupled to a monolithic silicon phototransistor detector.
• Most Economical Optoisolator Choice for Medium Speed, Switching Applications
• Meets or Exceeds All JEDEC Registered Specifications
Applications
• General Purpose Switching Circuits
• Interfacing and coupling systems of different potentials and impedances
• I/O Interfacing
• Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current — Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
VR
3
Volts
IF
60
mA
PD
100
mW
1.41
mW/°C
OUTPUT TRANSISTOR
Collector–Emitter Voltage
Emitter–Collector Voltage
Collector–Base Voltage
Collector Current — Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
VCEO
30
VECO
7
VCBO
70
IC
50
PD
150
Volts
Volts
Volts
mA
mW
1.76
mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
250
mW
2.94
mW/°C
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
TA
– 55 to +100
°C
Tstg – 55 to +150
°C
Soldering Temperature (10 sec, 1/16″ from case)
TL
260
°C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
M4N26
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
SCHEMATIC
1
6
2
5
3
4
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
© M^Mo^oto^tr^oo^rla^o,^lI^anc^O. 1^p9^t9^o7^{electronics Device Data}
1