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M4N25 Datasheet, PDF (1/8 Pages) Motorola, Inc – 6-Pin DIP Optoisolators Transistor Output | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by M4N25/D
6-Pin DIP Optoisolators
Transistor Output
The M4N25 device consists of a gallium arsenide infrared emitting diode
optically coupled to a silicon NPN phototransistor detector.
⢠Most Economical Optoisolator Choice for Medium Speed, Switching Applications
⢠Meets or Exceeds All JEDEC Registered Specifications
Applications
⢠General Purpose Switching Circuits
⢠Interfacing and coupling systems of different potentials and impedances
⢠I/O Interfacing
⢠Solid State Relays
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
INPUT LED
Reverse Voltage
Forward Current â Continuous
LED Power Dissipation @ TA = 25°C
with Negligible Power in Output Detector
Derate above 25°C
VR
3
Volts
IF
60
mA
PD
100
mW
1.41
mW/°C
OUTPUT TRANSISTOR
CollectorâEmitter Voltage
EmitterâCollector Voltage
CollectorâBase Voltage
Collector Current â Continuous
Detector Power Dissipation @ TA = 25°C
with Negligible Power in Input LED
Derate above 25°C
VCEO
30
VECO
7
VCBO
70
IC
50
PD
150
Volts
Volts
Volts
mA
mW
1.76
mW/°C
TOTAL DEVICE
Isolation Surge Voltage(1)
(Peak ac Voltage, 60 Hz, 1 sec Duration)
VISO
7500
Vac(pk)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
PD
250
mW
2.94
mW/°C
Ambient Operating Temperature Range(2)
Storage Temperature Range(2)
TA
â 55 to +100
°C
Tstg â 55 to +150
°C
Soldering Temperature (10 sec, 1/16â³ from case)
TL
260
°C
1. Isolation surge voltage is an internal device dielectric breakdown rating.
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.
M4N25
STYLE 1 PLASTIC
6
1
STANDARD THRU HOLE
SCHEMATIC
1
6
2
5
3
4
PIN 1. LED ANODE
2. LED CATHODE
3. N.C.
4. EMITTER
5. COLLECTOR
6. BASE
© MMoototroorlao,lIancO. 1p9t9o7electronics Device Data
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