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M1MA151WKT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – Common Cathode Silicon Dual Switching Diodes
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by M1MA151WKT1/D
Common Cathode Silicon
Dual Switching Diodes
These Common Cathode Silicon Epitaxial Planar Dual Diodes are designed for use
in ultra high speed switching applications. These devices are housed in the SC–59
package which is designed for low power surface mount applications.
• Fast trr, < 3.0 ns
• Low CD, < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA151/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA151/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
M1MA151WKT1
M1MA152WKT1
Motorola Preferred Devices
SC–59 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODES
40/80 V–100 mA
SURFACE MOUNT
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
2
1
ANODE
Value
Unit
Reverse Voltage
M1MA151WKT1
VR
M1MA152WKT1
40
Vdc
80
Peak Reverse Voltage
M1MA151WKT1
VRM
40
Vdc
M1MA152WKT1
80
Forward Current
Single
Dual
IF
100
mAdc
150
Peak Forward Current
Single
Dual
IFM
225
mAdc
340
Peak Forward Surge Current Single
Dual
IFSM(1)
500
750
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
200
Junction Temperature
TJ
150
Storage Temperature
Tstg
– 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
mW
°C
°C
Condition
Reverse Voltage Leakage Current
M1MA151WKT1
IR
M1MA152WKT1
Forward Voltage
Reverse Breakdown Voltage
VF
M1MA151WKT1
VR
M1MA152WKT1
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 µA
Diode Capacitance
Reverse Recovery Time
CD
trr(2)
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100 Ω, Irr = 0.1 IR
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 3
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
3
2
1
CASE 318D–03, STYLE 3
SC–59
Min
Max
Unit
—
0.1
µAdc
—
0.1
—
1.2
Vdc
40
—
Vdc
80
—
—
2.0
pF
—
3.0
ns
1