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M1MA141WKT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – SC-70/SOT-323 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by M1MA141WKT1/D
Common Cathode Silicon
Dual Switching Diode
This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in
ultra high speed switching applications. This device is housed in the SC–70 package
which is designed for low power surface mount applications.
• Fast trr, < 3.0 ns
• Low CD, < 2.0 pF
• Available in 8 mm Tape and Reel
Use M1MA141/2WKT1 to order the 7 inch/3000 unit reel.
Use M1MA141/2WKT3 to order the 13 inch/10,000 unit reel.
CATHODE
3
M1MA141WKT1
M1MA142WKT1
Motorola Preferred Devices
SC–70/SOT–323 PACKAGE
COMMON CATHODE
DUAL SWITCHING DIODE
40/80 V–100 mA
SURFACE MOUNT
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
1
2
ANODE
Value
Unit
Reverse Voltage
M1MA141WKT1
VR
M1MA142WKT1
40
Vdc
80
Peak Reverse Voltage
M1MA141WKT1
VRM
40
Vdc
M1MA142WKT1
80
Forward Current
Single
Dual
IF
100
mAdc
150
Peak Forward Current
Single
Dual
IFM
225
mAdc
340
Peak Forward Surge Current Single
Dual
IFSM(1)
500
750
mAdc
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
150
Junction Temperature
TJ
150
Storage Temperature
Tstg
– 55 ~ + 150
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
mW
°C
°C
Condition
Reverse Voltage Leakage Current
M1MA141WKT1
IR
M1MA142WKT1
Forward Voltage
Reverse Breakdown Voltage
VF
M1MA141WKT1
VR
M1MA142WKT1
VR = 35 V
VR = 75 V
IF = 100 mA
IR = 100 µA
Diode Capacitance
Reverse Recovery Time
CD
trr(2)
VR = 0, f = 1.0 MHz
IF = 10 mA, VR = 6.0 V,
RL = 100 Ω, Irr = 0.1 IR
1. t = 1 SEC
2. trr Test Circuit
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
3
1
2
CASE 419–02, STYLE 5
SC–70/SOT–323
Min
Max
Unit
—
0.1
µAdc
—
0.1
—
1.2
Vdc
40
—
Vdc
80
—
—
2.0
pF
—
3.0
ns
1