DAP222 Datasheet, PDF (1/6 Pages) Motorola, Inc – SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by DAP222/D
Common Anode Silicon
Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra
high speed switching applications. This device is housed in the SOT–416/SC–90
package which is designed for low power surface mount applications, where board
space is at a premium.
• Fast trr
• Low CD
• Available in 8 mm Tape and Reel
DAP222
SOT–416/SC–90 PACKAGE
COMMON ANODE
DUAL SWITCHING DIODE
SURFACE MOUNT
3
2
1
CASE 463–01, STYLE 4
SOT–416/SC–90
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
VR
80
Vdc
VRM
80
Vdc
IF
100
mAdc
IFM
300
mAdc
IFSM(1)
2.0
Adc
DEVICE MARKING
DAP222 = P9
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
150
mW
150
°C
– 55 ~ + 150
°C
Condition
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
1. t = 1 µS
2. trr Test Circuit on following page.
IR
VF
VR
CD
trr(2)
VR = 70 V
IF = 100 mA
IR = 100 µA
VR = 6.0 V, f = 1.0 MHz
IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR
ANODE
3
1
2
CATHODE
Min
Max
—
0.1
—
1.2
80
—
—
3.5
—
4.0
Unit
µAdc
Vdc
Vdc
pF
ns
Thermal Clad is a trademark of the Bergquist Company
REV 1
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