CA2832C Datasheet, PDF (1/4 Pages) Motorola, Inc – 35.5 dB 1-200 MHz 1.6 WATT WIDEBAND LINEAR AMPLIFIER

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Wideband Linear Amplifier
. . . designed for amplifier applications in 50 to 100 ohm systems requiring wide
bandwidth, low noise and low distortion. This hybrid provides excellent gain
stability with temperature and linear amplification as a result of the push–pull
circuit design.
• Specified Characteristics at VCC = 28 V, TC = 25°C:
Frequency Range — 1 to 200 MHz
Output Power — 1580 mW Typ @ 1 dB Compression, f = 200 MHz
Power Gain — 35.5 dB Typ @ f = 100 MHz
PEP — 900 mW Typ @ –ā32 dB IMD
Noise Figure — 5 dB Typ @ f = 200 MHz
ITO — 47 dBm @ f = 200 MHz
• All Gold Metallization for Improved Reliability
• Unconditional Stability Under All Load Conditions
Order this document
by CA2832C/D
CA2832C
35.5 dB
1 – 200 MHz
1.6 WATT
WIDEBAND
LINEAR AMPLIFIER
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
DC Supply Voltage
VCC
30
Vdc
RF Power Input
Operating Case Temperature Range
Storage Temperature Range
Pin
+5
dBm
TC
– 20 to + 90
°C
Tstg
– 40 to +100
°C
CASE 714F–03, STYLE 1
[CA (POS. SUPPLY)]
ELECTRICAL CHARACTERISTICS (TC = 25°C, VCC = 28 V, 50 Ω system unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
1
—
200
MHz
Gain Flatness (f = 1– 200 MHz)
—
—
± 0.5
±1
dB
Power Gain (f = 100 MHz)
Noise Figure, Broadband (f = 200 MHz)
PG
34
35.5
37
dB
NF
—
5
6
dB
Power Output — 1 dB Compression (f = 1– 200 MHz)
Power Output — 1 dB Compression (f = 150 MHz)
Third Order Intercept (See Figure 10, f1 = 200 MHz)
Input/Output VSWR (f = 1– 200 MHz)
Po _1dB
1260
1580
—
mW
Po _1dB
—
2000
—
mW
ITO
45
47
—
dBm
VSWR
—
1.5:1
2:1
—
Second Harmonic Distortion (Po = 100 mW, f2H = 150 MHz)
Peak Envelope Power (Two Tone Distortion Test — See Figure 10)
(f = 1 – 200 MHz @ – 32 dB IMD)
dso
PEP
—
– 70
– 60
dB
—
900
—
mW
Supply Current
ICC
400
435
470
mA
©MMOotoTrOolaR, OIncL.A19R94F DEVICE DATA
CA2832C
1