|
BUL45 Datasheet, PDF (1/10 Pages) Motorola, Inc – POWER TRANSISTOR 5.0 AMPERES 700 VOLTS 35 and 75 WATTS | |||
|
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUL45/D
⢠Designer's Data Sheet
NPN Silicon Power Transistor
t High Voltage SWITCHMODE Series
Designed for use in electronic ballast (light ballast) and in Switchmode Power
supplies up to 50 Watts. Main features include:
⢠Improved Efficiency Due to:
â Low Base Drive Requirements (High and Flat DC Current Gain hFE)
â Low Power Losses (OnâState and Switching Operations)
â Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 µs (typ)
â Fast Switching: @ IC = 2.0 A, IB1 = IB2 = 0.4 A
⢠Full Characterization at 125°C
⢠Tight Parametric Distributions Consistent LotâtoâLot
⢠BUL45F, Case 221D, is UL Recognized at 3500 VRMS: File #E69369
BUL45 *
BUL45F*
*Motorola Preferred Device
POWER TRANSISTOR
5.0 AMPERES
700 VOLTS
35 and 75 WATTS
MAXIMUM RATINGS
Rating
Symbol BUL45 BUL45F Unit
CollectorâEmitter Sustaining Voltage
CollectorâEmitter Breakdown Voltage
EmitterâBase Voltage
Collector Current â Continuous
â Peak(1)
Base Current
RMS Isolated Voltage(2)
(for 1 sec, R.H. < 30%,
TC = 25°C)
Total Device Dissipation
Derate above 25°C
Test No. 1 Per Fig. 22a
Test No. 2 Per Fig. 22b
Test No. 3 Per Fig. 22c
(TC = 25°C)
VCEO
VCES
VEBO
IC
ICM
IB
VISOL
PD
400
700
9.0
5.0
10
2.0
â
4500
â
3500
â
1500
75
35
0.6
0.28
Vdc
Vdc
Vdc
Adc
Adc
Volts
Watts
W/°C
BUL45
CASE 221Aâ06
TOâ220AB
Operating and Storage Temperature
TJ, Tstg
â 65 to 150
THERMAL CHARACTERISTICS
Rating
Symbol MJE18006 MJF18006
Thermal Resistance â Junction to Case
â Junction to Ambient
RθJC
1.65
3.55
RθJA
62.5
62.5
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
°C
Unit
°C/W
Min
BUL45F
CASE 221Dâ02
ISOLATED TOâ220 TYPE
UL RECOGNIZED
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorâEmitter Sustaining Voltage (IC = 100 mA, L = 25 mH)
VCEO(sus)
400
â
â
Vdc
Collector Cutoff Current (VCE = Rated VCEO, IB = 0)
ICEO
â
â
100
µAdc
Collector Cutoff Current (VCE = Rated VCES, VEB = 0)
(TC = 125°C)
ICES
â
â
10
µAdc
â
â
100
Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0)
(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ⤠10%.
(2) Proper strike and creepage distance must be provided.
IEBO
â
â
100
µAdc
(continued)
Designerâs and SWITCHMODE are trademarks of Motorola, Inc.
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
1
|
▷ |