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BUH51 Datasheet, PDF (1/10 Pages) Motorola, Inc – POWER TRANSISTOR 3 AMPERES 800 VOLTS 50 WATTS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advance Information
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH51 has an application specific stateâofâart die designed for use in
50 Watts Halogen electronic transformers.
This power transistor is specifically designed to sustain the large inrush current
during either the startâup conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
⢠Improved Efficiency Due to the Low Base Drive Requirements:
â High and Flat DC Current Gain hFE
â Fast Switching
⢠Robustness Thanks to the Technology Developed to Manufacture
this Device
⢠Motorola â6 SIGMAâ Philosophy Providing Tight and Reproducible
Parametric Distributions
Order this document
by BUH51/D
BUH51
POWER TRANSISTOR
3 AMPERES
800 VOLTS
50 WATTS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Sustaining Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâBase Breakdown Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Breakdown Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Peak(1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current â Continuous
Base Current â Peak (1)
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ *Total Device Dissipation @ TC = 25_C
*Derate above 25°C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Temperature
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ â Junction to Case
â Junction to Ambient
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Maximum Lead Temperature for Soldering Purposes:
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ 1/8â³ from case for 5 seconds
Symbol
VCEO
VCBO
VCES
VEBO
IC
ICM
IB
IBM
PD
TJ, Tstg
RθJC
RθJA
TL
CASE 77â07
TOâ225AA TYPE
Value
500
800
800
10
3
8
2
4
50
0.4
â 65 to 150
2.5
100
260
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watt
W/_C
_C
_C/W
_C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle ⤠10%.
Designerâs and SWITCHMODE are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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