BSS64LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – Driver Transistor(NPN)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSS64LT1/D
Driver Transistor
NPN Silicon
COLLECTOR
3
BSS64LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS64LT1 = AM
Symbol
VCEO
VCBO
VEBO
IC
Value
80
120
5.0
100
Symbol
PD
R_qJA
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
– 55 to +150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 4.0 mAdc)
Collector – Base Breakdown Voltage
(IC = 100 mAdc)
Emitter – Base Breakdown Voltage
(IE = 100 mAdc)
Collector Cutoff Current
(VCE = 90 Vdc)
(TA = 150°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc)
  1. FR– 5 = 1.0 0.75 0.062 in.
  2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
2
EMITTER
Unit
Vdc
Vdc
Vdc
mAdc
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
3
1
2
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
Min
Max
Unit
Vdc
80
—
Vdc
120
—
Vdc
5.0
—
µAdc
—
0.1
—
500
nAdc
—
200
Thermal Clad is a trademark of the Bergquist Company.
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1