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BSS63LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – High Voltage Transistor(PNP) | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSS63LT1/D
High Voltage Transistor
PNP Silicon
COLLECTOR
3
BSS63LT1
1
BASE
MAXIMUM RATINGS
Rating
Collector â Emitter Voltage
Collector â Emitter Voltage
RBE = 10 kâ¦
Collector Current â Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FRâ 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS63LT1 = T1
Symbol
VCEO
VCER
IC
Value
â100
â110
â100
2
EMITTER
Unit
Vdc
Vdc
mAdc
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
â 55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector â Emitter Breakdown Voltage
(IC = â100 µAdc)
Collector â Emitter Breakdown Voltage
(IC = â10 µAdc, IE = 0, RBE = 10 kâ¦)
Collector â Base Breakdown Voltage
(IE = â10 mAdc, IE = 0)
Emitter â Base Breakdown Voltage
(IE = â10 mAdc)
Collector Cutoff Current
(VCB = â90 Vdc, IE = 0)
Collector Cutoff Current
(VCE = â110 Vdc, RBE = 10 kâ¦)
Emitter Cutoff Current
(VEB = â6.0 Vdc, IC = 0)
1. FRâ 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company.
Symbol
V(BR)CEO
V(BR)CER
V(BR)CBO
V(BR)EBO
ICBO
ICER
IEBO
Min
â100
â110
â110
â6.0
â
â
â
REV 1
©MMotootorroollaa,
SmallâSignal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
3
1
2
CASE 318 â 08, STYLE 6
SOTâ 23 (TO â 236AB)
Typ
Max
Unit
Vdc
â
â
Vdc
â
â
Vdc
â
â
Vdc
â
â
nAdc
â
â100
µAdc
â
â10
nAdc
â
â200
1
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