BSS123LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Transistor(N-Channel)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSS123LT1/D
TMOS FET Transistor
N–Channel
3 DRAIN
BSS123LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current
Continuous(1)
Pulsed(2)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(3)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
BSS123LT1 = SA
1
GATE
®
2 SOURCE
Symbol
Value
Unit
VDSS
100
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
Adc
ID
0.17
IDM
0.68
Symbol
PD
R_qJA
TJ, Tstg
Max
225
1.8
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
V(BR)DSS
100
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
IDSS
—
—
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
ON CHARACTERISTICS(4)
IGSS
—
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
—
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
gfs
80
1. The Power Dissipation of the package may result in a lower continuous drain current.
v v 2. Pulse Width 300 ms, Duty Cycle 2.0%.
  3. FR– 5 = 1.0 0.75 0.062 in.
v v 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
3
1
2
CASE 318 – 08, STYLE 21
SOT– 23 (TO – 236AB)
Typ
Max
Unit
—
—
Vdc
µAdc
—
15
—
60
—
50
nAdc
—
2.8
Vdc
5.0
6.0
Ω
—
—
mmhos
1