BSP16T1 Datasheet, PDF (1/6 Pages) Motorola, Inc – SOT-223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BSP16T1/D
SOT-223 Package
High Voltage Transistor
PNP Silicon
COLLECTOR 2,4
BASE
1
EMITTER 3
BSP16T1
Motorola Preferred Device
SOT–223 PACKAGE
PNP SILICON
HIGH VOLTAGE
TRANSISTOR
SURFACE MOUNT
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
Base Current
Total Device Dissipation, TA = 25°C ⁽¹⁾
Storage Temperature Range
Junction Temperature
DEVICE MARKING
BT2
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Symbol
VCEO
VCBO
VEBO
IC
IB
PD
Tstg
TJ
Value
–300
–350
–6.0
–1000
–500
1.5
– 65 to +150
150
Symbol
Max
R_qJA
83.3
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
Watts
°C
°C
Unit
°C/W
4
1
2
3
CASE 318E-04, STYLE 1
TO-261AA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –50 mAdc, IB = 0, L = 25 mH)
V(BR)CEO
Vdc
–300
—
Collector – Base Breakdown Voltage
(IC = –100 mAdc, IE = 0)
V(BR)CBO
Vdc
–300
—
Collector–Emitter Cutoff Current
(VCE = –250 Vdc, IB = 0)
ICES
µAdc
—
–50
Collector–Base Cutoff Current
(VCB = –280 Vdc, IE = 0)
ICBO
µAdc
—
–1.0
Emitter–Base Cutoff Current
(VEB = –6.0 Vdc, IC = 0)
IEBO
µAdc
—
–20
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in.
Thermal Clad is a trademark of the Bergquist Company
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoottoorroollaa, ISncm. 1a9l9l–6Signal Transistors, FETs and Diodes Device Data
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