BS170 Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS FET Switching(N-Channel-Enhancement)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BS170/D
TMOS FET Switching
N–Channel — Enhancement
BS170
1 DRAIN
2
GATE
®
3 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Drain Current(1)
Total Device Dissipation @ TA = 25°C
Operating and Storage Junction
Temperature Range
VDS
60
Vdc
VGS
± 20
Vdc
VGSM
± 40
Vpk
ID
0.5
Adc
PD
350
mW
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
IGSS
—
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µAdc)
ON CHARACTERISTICS(2)
V(BR)DSS
60
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(Th)
0.8
Static Drain–Source On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
rDS(on)
—
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
ID(off)
—
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
SMALL– SIGNAL CHARACTERISTICS
gfs
—
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Ciss
—
Turn–On Time
(ID = 0.2 Adc) See Figure 1
ton
—
Turn–Off Time
(ID = 0.2 Adc) See Figure 1
toff
—
v v ^{1. The Power Dissipation of the package may result in a lower continuous drain current.}
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
1
2
3
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
Typ
Max
Unit
0.01
10
nAdc
90
—
Vdc
2.0
3.0
Vdc
1.8
5.0
Ω
—
0.5
µA
200
—
mmhos
—
60
pF
4.0
10
ns
4.0
10
ns
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1