BS107 Datasheet, PDF (1/4 Pages) Motorola, Inc – TMOS Switching(N-Channel-Enhancement)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BS107/D
TMOS Switching
N–Channel — Enhancement
1 DRAIN
2
GATE
®
3 SOURCE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
VDS
200
Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
VGS
± 20
Vdc
VGSM
± 30
Vpk
Drain Current
Continuous(1)
Pulsed(2)
mAdc
ID
250
IDM
500
Total Device Dissipation @ TA = 25°C
PD
Derate above 25°C
350
mW
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to 150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0)
Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc)
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS(2)
IDSS
—
V(BR)DSX 200
IGSS
—
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)
Static Drain–Source On Resistance
BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)
(VGS = 10 Vdc, ID = 200 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Forward Transconductance
(VDS = 25 Vdc, ID = 250 mAdc)
SWITCHING CHARACTERISTICS
VGS(Th)
1.0
rDS(on)
—
—
—
—
Ciss
—
Crss
—
Coss
—
gfs
200
Turn–On Time
ton
—
Turn–Off Time
toff
—
v v ^{1. The Power Dissipation of the package may result in a lower continuous drain current.}
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
BS107
BS107A
1
2
3
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
Typ
Max
Unit
—
30
nAdc
—
—
Vdc
0.01
10
nAdc
—
3.0
Vdc
Ohms
—
28
—
14
4.5
6.0
4.8
6.4
60
—
pF
6.0
—
pF
30
—
pF
400
—
mmhos
6.0
15
ns
12
15
ns
REV 1
©^MM^oto^oto^rr^oo^ll^aa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1