BFS17LT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF TRANSISTOR NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise amplifier, oscillator and
mixer applications. Packaged for thick or thin film circuits using surface mount
components.
• T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Base Voltage
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
VCEO
15
Vdc
VCBO
25
Vdc
TJmax
150
°C
Symbol
Max
Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C (1)
PD
350
mW
2.8
mW/°C
Storage Temperature
Thermal Resistance Junction to Ambient (1)
DEVICE MARKING
Tstg
R_θJA
– 55 to +150
357
°C
°C/W
BFS17LT1 = E1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA)
Collector–Base Breakdown Voltage (IC = 100 µA)
Collector Cutoff Current (VCE = 10 V)
Collector Cutoff Current (VCB = 10 V)
Emitter Cutoff Current (VEB = 4 V)
ON CHARACTERISTICS
V(BR)CEO
15
V(BR)CBO
25
ICEO
—
ICBO
—
IEBO
—
DC Current Gain
(IC = 2 mA, VCE = 1 V)
(IC = 25 mA, VCE = 1 V)
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA)
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA)
SMALL–SIGNAL CHARACTERISTICS
hFE
20
20
VCE(sat)
—
VBE(sat)
—
Current–Gain — Bandwidth Product
(IC = 2 mA, VCE = 5 V, f = 500 MHz)
(IC = 25 mA, VCE = 5 V, f = 500 MHz)
Output Capacitance (VCB = 10 V, f = 1 MHz)
Noise Figure (IC = 2 mA, VCE = 5 V, RS = 50 Ω, f = 30 MHz)
NOTE:
1. Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
fT
—
—
CCB
—
NF
—
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
Order this document
by BFS17LT1/D
BFS17LT1
RF TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
(TO–236AA/AB)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
25
nA
—
25
nA
—
100
µA
—
—
150
—
—
—
0.4
V
—
1
V
GHz
1
—
1.3
—
1
—
pF
5
—
dB
BFS17LT1
1