BFR93ALT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF TRANSISTORS NPN SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by BFR93ALT1/D
The RF Line
NPN Silicon
High-Frequency Transistors
Designed primarily for use in high–gain, low–noise, small–signal UHF and
microwave amplifiers constructed with thick and thin–film circuits using surface
mount components.
• T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C (2)
Derate linearly above Tcase = 75°C @
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Value
12
15
2.0
35
150
0.306
4.08
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Symbol
Tstg
R_θJC
Max
– 55 to +150
245
Unit
°C
°C/W
DEVICE MARKING
BFR93ALT1 = R2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (1)
(IC = 10 mA)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = 10 µA)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IC = 100 µA)
V(BR)EBO
Collector Cutoff Current (VCE = 10 V)
Collector Cutoff Current (VCB = 10 V)
ICEO
ICBO
ON CHARACTERISTICS
DC Current Gain (1)
hFE
(IC = 30 mA, VCE = 5.0 V)
Collector–Emitter Saturation Voltage (1)
(IC = 35 mA, IB = 7.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage (1)
(IC = 35 mA, IB = 7.0 mA)
VBE(sat)
NOTES:
1. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
2. Case temperature measured on collector lead immediately adjacent to body of package.
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
BFR93ALT1
RF TRANSISTORS
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
Min
Max
Unit
12
—
Vdc
15
—
Vdc
2.0
—
Vdc
—
50
nA
—
50
nA
40
—
—
—
0.5
Vdc
—
1.2
Vdc
BFR93ALT1
1