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BFR92ALT1 Datasheet, PDF (1/2 Pages) Motorola, Inc – RF TRANSISTORS NPN SILICON | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by BFR92ALT1/D
The RF Line
NPN Silicon
High-Frequency Transistors
Designed primarily for use in highâgain, lowânoise, smallâsignal UHF and
microwave amplifiers constructed with thick and thinâfilm circuits using surface
mount components.
⢠T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
Collector Current â Continuous
Maximum Junction Temperature
Power Dissipation, Tcase = 75°C
Derate linearly above Tcase = 75°C @
THERMAL CHARACTERISTICS
Characteristic
Storage Temperature
Thermal Resistance Junction to Case
DEVICE MARKING
BFR92ALT1 = P2
Symbol
VCEO
VCBO
VEBO
IC
TJmax
PD(max)
Value
15
20
2.0
25
150
0.273
3.64
Unit
Vdc
Vdc
Vdc
mAdc
°C
W
mW/°C
Symbol
Tstg
RθJC
Max
â 55 to +150
275
Unit
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorâEmitter Breakdown Voltage (1)
(IC = 10 mA)
CollectorâBase Breakdown Voltage
(IC = 100 µA)
EmitterâBase Breakdown Voltage
(IC = 100 µA)
Collector Cutoff Current
(VCB = 10 V)
ON CHARACTERISTICS
DC Current Gain
(IC = 14 mA, VCE = 10 V)
CollectorâEmitter Saturation Voltage (1)
(IC = 25 mA, IB = 5.0 mA)
BaseâEmitter Saturation Voltage (1)
(IC = 25 mA, IB = 5.0 mA)
NOTE:
1. Pulse Width ⤠300 µs, Duty Cycle ⤠2.0%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
BFR92ALT1
RF TRANSISTORS
NPN SILICON
CASE 318â08, STYLE 6
SOTâ23
LOW PROFILE
Min
Max
Unit
15
â
Vdc
20
â
Vdc
2.0
â
Vdc
â
50
nA
40
â
â
â
0.5
Vdc
â
1.2
Vdc
(continued)
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
BFR92ALT1
1
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